2SK3515-01MR Transistor — Specifications & Equivalents
2SK3515-01MR Transistor Datasheet, 2SK3515-01MR Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 48 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 450 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 10 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 120 pF |
| Package | TO-220F |
| isc N-Channel MOSFET Transistor 2SK3515-01MRFEATURESDrain Current | I = 8A@ T =25D CDrain Source Voltage: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen |