Question 1

What is 2SK1101-01MR?

Accepted Answer

2SK1101-01MR Transistor Datasheet, 2SK1101-01MR Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2SK1101-01MR?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 50 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V, |Id| ⓘ - Maximum Drain Current: 10 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Cossⓘ - Output Capacitance: 160 pF, Package: SC67, DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK1109N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORFOR IMPEDANCE CONVERTER OF ECMDESCRIPTIONPACKAGE DRAWING (Unit: mm) The 2SK1109 is suitable for converter of ECM.0.8FEATURES Compact package1. Source High forward transfer admittance2. Drain3. Gate1000 S TYP. (IDSS = 100 A)1 21600 S TYP. (IDSS = 200

Question 3

What are equivalent components to 2SK1101-01MR?

Accepted Answer

Common equivalents include: AOWF9N70, AOY2N60, AOY423, AOY514, AOY516, AOY526, AOY528, 2SJ154

2SK1101-01MR Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	50 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	450 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	30 V
\|Id\| ⓘ - Maximum Drain Current	10 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Cossⓘ - Output Capacitance	160 pF
Package	SC67
DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK1109N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORFOR IMPEDANCE CONVERTER OF ECMDESCRIPTIONPACKAGE DRAWING (Unit	mm) The 2SK1109 is suitable for converter of ECM.0.8FEATURES Compact package1. Source High forward transfer admittance2. Drain3. Gate1000 S TYP. (IDSS = 100 A)1 21600 S TYP. (IDSS = 200