2SK1101-01MR MOSFET — Specifications & Equivalents

Manufacturer: Multi-source (JIS registered part number)

About the 2SK1101-01MR

The 2SK1101-01MR is a MOSFET with a drain–source voltage (VDS) rating of 450 V and a continuous drain current (ID) of 10 A. It can dissipate up to 50 W and is rated to a junction temperature of 150 °C. It is supplied in the SC67 package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 450 V
  • Max continuous drain current (ID): 10 A
  • Power dissipation (PD): 50 W
  • Max junction temperature (TJ): 150 °C
  • Package: SC67
  • Manufacturer: Multi-source (JIS registered part number)

Typical applications

With its 450 V drain–source rating the 2SK1101-01MR sits in the medium-high-voltage class of switching MOSFETs, typically found in telecom and industrial DC rails, boost and flyback converters, LED and backlight drivers and power-factor-correction stages. Common where the bus sits well above 100 V but below rectified mains.

Gate drive and switching notes

Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 160 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the 2SK1101-01MR

A drop-in substitute for the 2SK1101-01MR should match its polarity and offer a drain–source rating of at least 450 V and a continuous drain current rating of at least 10 A.

Mechanically, check the replacement against the SC67 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Because 2SK1101-01MR is a JIS-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 2SK1101-01MR?

The 2SK1101-01MR is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 450 V drain-source and 10 A continuous drain current.

What is the maximum voltage of the 2SK1101-01MR?

The 2SK1101-01MR has a maximum drain-source voltage (Vds) of 450 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the 2SK1101-01MR handle?

It is rated for 10 A of continuous drain current, with power dissipation limited to 50 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the 2SK1101-01MR come in?

It is listed in SC67. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 2SK1101-01MR?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation50 W
|Vds|ⓘ - Maximum Drain-Source Voltage450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage30 V
|Id| ⓘ - Maximum Drain Current10 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance160 pF
PackageSC67
DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK1109N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORFOR IMPEDANCE CONVERTER OF ECMDESCRIPTIONPACKAGE DRAWING (Unitmm) The 2SK1109 is suitable for converter of ECM.0.8FEATURES Compact package1. Source High forward transfer admittance2. Drain3. Gate1000 S TYP. (IDSS = 100 A)1 21600 S TYP. (IDSS = 200

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