2SK1916-01R Transistor — Specifications & Equivalents
2SK1916-01R Transistor Datasheet, 2SK1916-01R Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 80 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 450 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 18 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 270 pF |
| Package | TO247 |
| isc N-Channel MOSFET Transistor 2SK1916DESCRIPTIONDrain Current I =18A@ T =25D CDrain Source Voltage- | V =450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNIT |