APT1001RBVFR MOSFET — Specifications & Equivalents

MOSFET N -Channel - APT1001RBVFR

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)1000 V
Gate-Source Voltage (Vgs)30 V
Drain Current (Id)11 A
Drain-Source On-Resistance (Rds)1
Rise Time (tr)11 nS
Output Capacitance (Coss)280 pF
Junction Temperature (Tj)150 °C
PackageTO247
Power Dissipation (Pd)278 W

Equivalent & Replacement Parts

No verified equivalents are listed for APT1001RBVFR yet.

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