APT1001RBVFR MOSFET — Specifications & Equivalents
MOSFET N -Channel - APT1001RBVFR
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 1000 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Drain Current (Id) | 11 A |
| Drain-Source On-Resistance (Rds) | 1 |
| Rise Time (tr) | 11 nS |
| Output Capacitance (Coss) | 280 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO247 |
| Power Dissipation (Pd) | 278 W |
Equivalent & Replacement Parts
No verified equivalents are listed for APT1001RBVFR yet.