APT1001RBVFR MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by Advanced Power Technology (now Microchip)
About the APT1001RBVFR
The APT1001RBVFR is an N-channel MOSFET with a drain–source voltage (VDS) rating of 1000 V, a continuous drain current (ID) of 11 A and an on-resistance (RDS(on)) of 1 Ω. It can dissipate up to 278 W and is rated to a junction temperature of 150 °C. It is supplied in the TO247 package.
At a glance
- Type: N-channel MOSFET
- Max drain–source voltage (VDS): 1000 V
- Max continuous drain current (ID): 11 A
- On-resistance (RDS(on)): 1 Ω
- Power dissipation (PD): 278 W
- Max junction temperature (TJ): 150 °C
- Package: TO247
- Manufacturer: Commonly produced by Advanced Power Technology (now Microchip)
Typical applications
With its 1000 V drain–source rating the APT1001RBVFR sits in the ultra-high-voltage class of switching MOSFETs, typically found in industrial ignition and igniter circuits, high-voltage pulse generators and electrostatic and CRT deflection stages. Ratings at this level demand careful creepage/clearance and insulation design on the PCB.
On-resistance of 1 Ω is relatively high, so this part is better suited to low duty-cycle or low-current switching than to continuous high-current conduction.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by a rise time of 11 ns and an output capacitance (Coss) of 280 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the APT1001RBVFR
A drop-in substitute for the APT1001RBVFR must be the same N-channel type and offer a drain–source rating of at least 1000 V, a continuous drain current rating of at least 11 A and an on-resistance no higher than 1 Ω if efficiency and heat matter.
Mechanically, check the replacement against the TO247 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the APT1001RBVFR?
The APT1001RBVFR is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 1000 V drain-source and 11 A continuous drain current.
What is the maximum voltage of the APT1001RBVFR?
The APT1001RBVFR has a maximum drain-source voltage (Vds) of 1000 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the APT1001RBVFR handle?
It is rated for 11 A of continuous drain current, with power dissipation limited to 278 W. Real-world capability depends on your heatsinking and ambient temperature.
What is the on-resistance of the APT1001RBVFR?
On-resistance (Rds(on)) is 1 Ω. Multiply by the square of your load current to estimate conduction loss.
What package does the APT1001RBVFR come in?
It is listed in TO247. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the APT1001RBVFR?
No verified equivalents are listed yet. Choose a part of the same polarity that meets or exceeds every rating above and shares a compatible package and pinout.
Key Specifications
| Type | MOSFET |
|---|---|
| Channel Type | N -Channel |
| Drain-Source Voltage (Vds) | 1000 V |
| Gate-Source Voltage (Vgs) | 30 V |
| Drain Current (Id) | 11 A |
| Drain-Source On-Resistance (Rds) | 1 |
| Rise Time (tr) | 11 nS |
| Output Capacitance (Coss) | 280 pF |
| Junction Temperature (Tj) | 150 °C |
| Package | TO247 |
| Power Dissipation (Pd) | 278 W |
Equivalent & Replacement Parts
No verified equivalents are listed for APT1001RBVFR yet.