2N7227JX Transistor — Specifications & Equivalents

2N7227JX Transistor Datasheet, 2N7227JX Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation150 W
|Vds|ⓘ - Maximum Drain-Source Voltage400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage20 V
|Id| ⓘ - Maximum Drain Current14 A
Tj ⓘ - Maximum Junction Temperature150 °C
PackageM-PAK
PD-91551DIRFN350JANTX2N7227UJANTXV2N7227UPOWER MOSFETREFMIL-PRF-19500/592SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN350 0.315 14AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resi
DTO-254G2N7227 400 Volt 0.315SJX2N7227*JV2N7227*TMPOWER MOS IV*QUALIFIED TO MIL-S-19500/592 31/7/92JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All RatingsTC = 25C unless otherwise specified.Symbol Parameter 2N7227 UNITVDSS Drain-Source Voltage400VoltsVGS Gate-Source Voltage20Continuous Drain Current @ TC = 25C14IDCo

Equivalent & Replacement Parts

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