Question 1

What is 2N7219?

Accepted Answer

2N7219 Transistor Datasheet, 2N7219 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2N7219?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 125 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 18 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Package: TO254, PD - 91548CIRFN240JANTX2N7219UJANTXV2N7219UPOWER MOSFETREF: MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN240 0.18 18AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-

Question 3

What are equivalent components to 2N7219?

Accepted Answer

Common equivalents include: 2N7120, 2N7121, 2N7122, 2N7123, 2N7124, 2N7125, 2N7126, 2N7218

2N7219 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	125 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	200 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	18 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Package	TO254
PD - 91548CIRFN240JANTX2N7219UJANTXV2N7219UPOWER MOSFETREF	MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN240 0.18 18AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-