IRF830 MOSFET — Specifications & Equivalents

MOSFET N -Channel - IRF830

Key Specifications

TypeMOSFET
Channel TypeN -Channel
Drain-Source Voltage (Vds)500 V
Gate-Source Voltage (Vgs)20 V
Drain Current (Id)4.5 A
Drain-Source On-Resistance (Rds)1.5
Rise Time (tr)8 nS
Output Capacitance (Coss)120 pF
Junction Temperature (Tj)150 °C
PackageTO220
Power Dissipation (Pd)100 W

Equivalent & Replacement Parts

No verified equivalents are listed for IRF830 yet.

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