Question 1

What is 2N7220?

Accepted Answer

2N7220 Transistor Datasheet, 2N7220 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2N7220?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 125 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V, |Id| ⓘ - Maximum Drain Current: 8 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Package: TO254, PD-91551DIRFN350JANTX2N7227UJANTXV2N7227UPOWER MOSFETREF: MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN350 0.315 14AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resi, PD-91550DIRFN340JANTX2N7221UJANTXV2N7221UPOWER MOSFETREF: MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN340 0.55 10AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-si, PD - 91547CIRFN150JANTX2N7224UJANTXV2N7224UPOWER MOSFETREF: MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 100V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN150 0.07 34AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-, PD - 90418CIRFN450JANTX2N7228UJANTXV2N7228UPOWER MOSFETREF: MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 500V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN450 0.415 12AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-

Question 3

What are equivalent components to 2N7220?

Accepted Answer

Common equivalents include: 2N7121, 2N7122, 2N7123, 2N7124, 2N7125, 2N7126, 2N7218, 2N7219

2N7220 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	125 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	500 V
\|Id\| ⓘ - Maximum Drain Current	8 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Package	TO254
PD-91551DIRFN350JANTX2N7227UJANTXV2N7227UPOWER MOSFETREF	MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN350 0.315 14AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resi
PD-91550DIRFN340JANTX2N7221UJANTXV2N7221UPOWER MOSFETREF	MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN340 0.55 10AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-si
PD - 91547CIRFN150JANTX2N7224UJANTXV2N7224UPOWER MOSFETREF	MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 100V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN150 0.07 34AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
PD - 90418CIRFN450JANTX2N7228UJANTXV2N7228UPOWER MOSFETREF	MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 500V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN450 0.415 12AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-