2N7220 MOSFET — Specifications & Equivalents
Manufacturer: Multi-source (JEDEC registered part number)
About the 2N7220
The 2N7220 is a MOSFET with a drain–source voltage (VDS) rating of 500 V and a continuous drain current (ID) of 8 A. It can dissipate up to 125 W and is rated to a junction temperature of 150 °C. It is supplied in the TO254 package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 500 V
- Max continuous drain current (ID): 8 A
- Power dissipation (PD): 125 W
- Max junction temperature (TJ): 150 °C
- Package: TO254
- Manufacturer: Multi-source (JEDEC registered part number)
Typical applications
With its 500 V drain–source rating the 2N7220 sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
Choosing a replacement for the 2N7220
A drop-in substitute for the 2N7220 should match its polarity and offer a drain–source rating of at least 500 V and a continuous drain current rating of at least 8 A.
Mechanically, check the replacement against the TO254 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Because 2N7220 is a JEDEC-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the 2N7220?
The 2N7220 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 500 V drain-source and 8 A continuous drain current.
What is the maximum voltage of the 2N7220?
The 2N7220 has a maximum drain-source voltage (Vds) of 500 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the 2N7220 handle?
It is rated for 8 A of continuous drain current, with power dissipation limited to 125 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the 2N7220 come in?
It is listed in TO254. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the 2N7220?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 125 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 500 V |
| |Id| ⓘ - Maximum Drain Current | 8 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Package | TO254 |
| PD-91551DIRFN350JANTX2N7227UJANTXV2N7227UPOWER MOSFETREF | MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN350 0.315 14AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resi |
| PD-91550DIRFN340JANTX2N7221UJANTXV2N7221UPOWER MOSFETREF | MIL-PRF-19500/596SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN340 0.55 10AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-si |
| PD - 91547CIRFN150JANTX2N7224UJANTXV2N7224UPOWER MOSFETREF | MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 100V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN150 0.07 34AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re- |
| PD - 90418CIRFN450JANTX2N7228UJANTXV2N7228UPOWER MOSFETREF | MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 500V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN450 0.415 12AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re- |