2N7224 Transistor — Specifications & Equivalents
2N7224 Transistor Datasheet, 2N7224 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 150 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 100 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 34 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Package | TO254 |
| PD - 91547CIRFN150JANTX2N7224UJANTXV2N7224UPOWER MOSFETREF | MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 100V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN150 0.07 34AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re- |
| PD-91551DIRFN350JANTX2N7227UJANTXV2N7227UPOWER MOSFETREF | MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN350 0.315 14AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resi |