2N7221 MOSFET — Specifications & Equivalents

Manufacturer: Multi-source (JEDEC registered part number)

About the 2N7221

The 2N7221 is a MOSFET with a drain–source voltage (VDS) rating of 400 V and a continuous drain current (ID) of 10 A. It can dissipate up to 125 W and is rated to a junction temperature of 150 °C. It is supplied in the TO254 package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 400 V
  • Max continuous drain current (ID): 10 A
  • Power dissipation (PD): 125 W
  • Max junction temperature (TJ): 150 °C
  • Package: TO254
  • Manufacturer: Multi-source (JEDEC registered part number)

Typical applications

With its 400 V drain–source rating the 2N7221 sits in the medium-high-voltage class of switching MOSFETs, typically found in telecom and industrial DC rails, boost and flyback converters, LED and backlight drivers and power-factor-correction stages. Common where the bus sits well above 100 V but below rectified mains.

Gate drive and switching notes

Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Choosing a replacement for the 2N7221

A drop-in substitute for the 2N7221 should match its polarity and offer a drain–source rating of at least 400 V and a continuous drain current rating of at least 10 A.

Mechanically, check the replacement against the TO254 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Because 2N7221 is a JEDEC-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 2N7221?

The 2N7221 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 400 V drain-source and 10 A continuous drain current.

What is the maximum voltage of the 2N7221?

The 2N7221 has a maximum drain-source voltage (Vds) of 400 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the 2N7221 handle?

It is rated for 10 A of continuous drain current, with power dissipation limited to 125 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the 2N7221 come in?

It is listed in TO254. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 2N7221?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation125 W
|Vds|ⓘ - Maximum Drain-Source Voltage400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage20 V
|Id| ⓘ - Maximum Drain Current10 A
Tj ⓘ - Maximum Junction Temperature150 °C
PackageTO254
PD-91550DIRFN340JANTX2N7221UJANTXV2N7221UPOWER MOSFETREFMIL-PRF-19500/596SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN340 0.55 10AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-si
PD-91551DIRFN350JANTX2N7227UJANTXV2N7227UPOWER MOSFETREFMIL-PRF-19500/592SURFACE MOUNT(SMD-1) 400V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN350 0.315 14AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resi
PD - 91547CIRFN150JANTX2N7224UJANTXV2N7224UPOWER MOSFETREFMIL-PRF-19500/592SURFACE MOUNT(SMD-1) 100V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN150 0.07 34AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-

Equivalent & Replacement Parts

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