2N7228JV Transistor — Specifications & Equivalents
2N7228JV Transistor Datasheet, 2N7228JV Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 150 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 500 V |
| |Id| ⓘ - Maximum Drain Current | 12 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Package | SMD2 |
| PD - 90418CIRFN450JANTX2N7228UJANTXV2N7228UPOWER MOSFETREF | MIL-PRF-19500/592SURFACE MOUNT(SMD-1) 500V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFN450 0.415 12AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re- |
| DTO-254G2N7228 500 Volt 0.415SJX2N7228*JV2N7228*TMPOWER MOS IV*QUALIFIED TO MIL-S-19500/592 31/7/92JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings | TC = 25C unless otherwise specified.Symbol Parameter 2N7228 UNITVDSS Drain-Source Voltage500VoltsVGS Gate-Source Voltage20Continuous Drain Current @ TC = 25C12IDCo |