SQD50P04-09L MOSFET — Specifications & Equivalents

About the SQD50P04-09L

The SQD50P04-09L is a MOSFET with a drain–source voltage (VDS) rating of 40 V and a continuous drain current (ID) of 50 A. It can dissipate up to 136 W and is rated to a junction temperature of 175 °C. It is supplied in the TO-252 package.

At a glance

  • Type: MOSFET
  • Max drain–source voltage (VDS): 40 V
  • Max continuous drain current (ID): 50 A
  • Power dissipation (PD): 136 W
  • Max junction temperature (TJ): 175 °C
  • Package: TO-252

Typical applications

With its 40 V drain–source rating the SQD50P04-09L sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.

The 50 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.

Gate drive and switching notes

Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.

Switching behaviour is characterised by an output capacitance (Coss) of 852 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.

Choosing a replacement for the SQD50P04-09L

A drop-in substitute for the SQD50P04-09L should match its polarity and offer a drain–source rating of at least 40 V and a continuous drain current rating of at least 50 A.

Mechanically, check the replacement against the TO-252 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the SQD50P04-09L?

The SQD50P04-09L is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 40 V drain-source and 50 A continuous drain current.

What is the maximum voltage of the SQD50P04-09L?

The SQD50P04-09L has a maximum drain-source voltage (Vds) of 40 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.

How much current can the SQD50P04-09L handle?

It is rated for 50 A of continuous drain current, with power dissipation limited to 136 W. Real-world capability depends on your heatsinking and ambient temperature.

What package does the SQD50P04-09L come in?

It is listed in TO-252. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the SQD50P04-09L?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.

Key Specifications

Pd ⓘ - Maximum Power Dissipation136 W
|Vds|ⓘ - Maximum Drain-Source Voltage40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage20 V
|Id| ⓘ - Maximum Drain Current50 A
Tj ⓘ - Maximum Junction Temperature175 °C
Cossⓘ - Output Capacitance852 pF
PackageTO-252
SQD50P06-15Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0155 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0200 AEC-Q101 QualifiedID (A) - 50 Material categorizationConfiguration
SQD50P08-25Lwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 80 AEC-Q101 QualifieddRDS(on) () at VGS = - 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.031 Material categorizationID (A) - 50For definitions of compliance please see Configuratio

Equivalent & Replacement Parts

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