SQD50N06-09L MOSFET — Specifications & Equivalents
About the SQD50N06-09L
The SQD50N06-09L is a MOSFET with a drain–source voltage (VDS) rating of 60 V and a continuous drain current (ID) of 50 A. It can dissipate up to 136 W and is rated to a junction temperature of 175 °C. It is supplied in the TO-252 package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 60 V
- Max continuous drain current (ID): 50 A
- Power dissipation (PD): 136 W
- Max junction temperature (TJ): 175 °C
- Package: TO-252
Typical applications
With its 60 V drain–source rating the SQD50N06-09L sits in the mid-range class of switching MOSFETs, typically found in 24 V and 48 V industrial and battery systems, motor drives and H-bridges and load and hot-swap switching.
The 50 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 435 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the SQD50N06-09L
A drop-in substitute for the SQD50N06-09L should match its polarity and offer a drain–source rating of at least 60 V and a continuous drain current rating of at least 50 A.
Mechanically, check the replacement against the TO-252 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the SQD50N06-09L?
The SQD50N06-09L is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 60 V drain-source and 50 A continuous drain current.
What is the maximum voltage of the SQD50N06-09L?
The SQD50N06-09L has a maximum drain-source voltage (Vds) of 60 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the SQD50N06-09L handle?
It is rated for 50 A of continuous drain current, with power dissipation limited to 136 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the SQD50N06-09L come in?
It is listed in TO-252. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the SQD50N06-09L?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 136 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 60 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 50 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Cossⓘ - Output Capacitance | 435 pF |
| Package | TO-252 |
| SQD50N06-09Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization | 600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim |
| SQD50N03-4m0Lwww.vishay.comVishay SiliconixAutomotive N-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 100 % Rg and UIS TestedRDS(on) () at VGS = 10 V 0.0031 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0040 Material categorization | ID (A) 50For definitions of compliance please seeConfiguration Single |