SQD50P03-07 MOSFET — Specifications & Equivalents
About the SQD50P03-07
The SQD50P03-07 is a MOSFET with a drain–source voltage (VDS) rating of 30 V and a continuous drain current (ID) of 50 A. It can dissipate up to 136 W and is rated to a junction temperature of 175 °C. It is supplied in the TO-252 package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 30 V
- Max continuous drain current (ID): 50 A
- Power dissipation (PD): 136 W
- Max junction temperature (TJ): 175 °C
- Package: TO-252
Typical applications
With its 30 V drain–source rating the SQD50P03-07 sits in the low-voltage class of switching MOSFETs, typically found in 12 V and 24 V automotive and industrial rails, synchronous buck converters, load switching and reverse-polarity protection and H-bridges for small motors.
The 50 A current rating puts it in high-current territory, where conduction loss (I² × RDS(on)) and thermal design usually matter more than switching loss. Budget for adequate copper area and a heatsink.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 766 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the SQD50P03-07
A drop-in substitute for the SQD50P03-07 should match its polarity and offer a drain–source rating of at least 30 V and a continuous drain current rating of at least 50 A.
Mechanically, check the replacement against the TO-252 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the SQD50P03-07?
The SQD50P03-07 is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 30 V drain-source and 50 A continuous drain current.
What is the maximum voltage of the SQD50P03-07?
The SQD50P03-07 has a maximum drain-source voltage (Vds) of 30 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the SQD50P03-07 handle?
It is rated for 50 A of continuous drain current, with power dissipation limited to 136 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the SQD50P03-07 come in?
It is listed in TO-252. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the SQD50P03-07?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 136 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 30 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 50 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Cossⓘ - Output Capacitance | 766 pF |
| Package | TO-252 |
| SQD50P03-07www.vishay.comVishay SiliconixAutomotive P-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 30 AEC-Q101 QualifieddRDS(on) () at VGS = - 10 V 0.007 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.011 Material categorization | ID (A) - 50For definitions of compliance please see Configuration |
| SQD50P06-15Lwww.vishay.comVishay SiliconixAutomotive P-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 60 Package with Low Thermal ResistanceRDS(on) () at VGS = - 10 V 0.0155 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.0200 AEC-Q101 QualifiedID (A) - 50 Material categorization | Configuration |
| SQD50P08-25Lwww.vishay.comVishay SiliconixAutomotive P-Channel 80 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) - 80 AEC-Q101 QualifieddRDS(on) () at VGS = - 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = - 4.5 V 0.031 Material categorization | ID (A) - 50For definitions of compliance please see Configuratio |