SKSS042N10N Transistor — Specifications & Equivalents
SKSS042N10N Transistor Datasheet, SKSS042N10N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 227 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 100 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 120 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 952 pF |
| Package | TO263 |