Question 1

What is NDP05N50Z?

Accepted Answer

NDP05N50Z Transistor Datasheet, NDP05N50Z Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of NDP05N50Z?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 96 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V, |Id| ⓘ - Maximum Drain Current: 5 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Cossⓘ - Output Capacitance: 68 pF, Package: TO220AB, NDF05N50Z, NDP05N50Z,NDD05N50ZN-Channel Power MOSFET500 V, 1.25 WFeatureshttp: //onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(on) (TYP) @ 2.2 A These Devices are Pb-Free and are RoHS Compliant500 V1.25 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP NDD UnitN-ChannelD (2)Drain-to-Source

Question 3

What are equivalent components to NDP05N50Z?

Accepted Answer

Common equivalents include: SQD50N02-04L, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L, SQD50N04-4M1, SQD50N04-4M5L

NDP05N50Z Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	96 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	500 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	30 V
\|Id\| ⓘ - Maximum Drain Current	5 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Cossⓘ - Output Capacitance	68 pF
Package	TO220AB
NDF05N50Z, NDP05N50Z,NDD05N50ZN-Channel Power MOSFET500 V, 1.25 WFeatureshttp	//onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(on) (TYP) @ 2.2 A These Devices are Pb-Free and are RoHS Compliant500 V1.25 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP NDD UnitN-ChannelD (2)Drain-to-Source