NDP05N50Z MOSFET — Specifications & Equivalents
Manufacturer: Commonly produced by onsemi (formerly Motorola)
About the NDP05N50Z
The NDP05N50Z is a MOSFET with a drain–source voltage (VDS) rating of 500 V and a continuous drain current (ID) of 5 A. It can dissipate up to 96 W and is rated to a junction temperature of 150 °C. It is supplied in the TO220AB package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 500 V
- Max continuous drain current (ID): 5 A
- Power dissipation (PD): 96 W
- Max junction temperature (TJ): 150 °C
- Package: TO220AB
- Manufacturer: Commonly produced by onsemi (formerly Motorola)
Typical applications
With its 500 V drain–source rating the NDP05N50Z sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 68 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the NDP05N50Z
A drop-in substitute for the NDP05N50Z should match its polarity and offer a drain–source rating of at least 500 V and a continuous drain current rating of at least 5 A.
Mechanically, check the replacement against the TO220AB footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the NDP05N50Z?
The NDP05N50Z is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 500 V drain-source and 5 A continuous drain current.
What is the maximum voltage of the NDP05N50Z?
The NDP05N50Z has a maximum drain-source voltage (Vds) of 500 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the NDP05N50Z handle?
It is rated for 5 A of continuous drain current, with power dissipation limited to 96 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the NDP05N50Z come in?
It is listed in TO220AB. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the NDP05N50Z?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 96 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 500 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 5 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 68 pF |
| Package | TO220AB |
| NDF05N50Z, NDP05N50Z,NDD05N50ZN-Channel Power MOSFET500 V, 1.25 WFeatureshttp | //onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche TestedVDSS RDS(on) (TYP) @ 2.2 A These Devices are Pb-Free and are RoHS Compliant500 V1.25 WABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP NDD UnitN-ChannelD (2)Drain-to-Source |