MMDF3N04HD MOSFET — Specifications & Equivalents
About the MMDF3N04HD
The MMDF3N04HD is a MOSFET with a drain–source voltage (VDS) rating of 60 V and a continuous drain current (ID) of 7 A. It can dissipate up to 4 W and is rated to a junction temperature of 175 °C. It is supplied in the SO8 package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 60 V
- Max continuous drain current (ID): 7 A
- Power dissipation (PD): 4 W
- Max junction temperature (TJ): 175 °C
- Package: SO8
Typical applications
With its 60 V drain–source rating the MMDF3N04HD sits in the mid-range class of switching MOSFETs, typically found in 24 V and 48 V industrial and battery systems, motor drives and H-bridges and load and hot-swap switching.
Gate drive and switching notes
Keep gate–source voltage within the ±20 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 110 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the MMDF3N04HD
A drop-in substitute for the MMDF3N04HD should match its polarity and offer a drain–source rating of at least 60 V and a continuous drain current rating of at least 7 A.
Mechanically, check the replacement against the SO8 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the MMDF3N04HD?
The MMDF3N04HD is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 60 V drain-source and 7 A continuous drain current.
What is the maximum voltage of the MMDF3N04HD?
The MMDF3N04HD has a maximum drain-source voltage (Vds) of 60 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the MMDF3N04HD handle?
It is rated for 7 A of continuous drain current, with power dissipation limited to 4 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the MMDF3N04HD come in?
It is listed in SO8. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the MMDF3N04HD?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 4 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 60 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 7 A |
| Tj ⓘ - Maximum Junction Temperature | 175 °C |
| Cossⓘ - Output Capacitance | 110 pF |
| Package | SO8 |
| MMDF3N04HDPreferred DevicePower MOSFET3 Amps, 40 VoltsN-Channel SO-8, DualThese miniature surface mount MOSFETs feature ultra low RDS(on)and true logic level performance. They are capable of withstanding highenergy in the avalanche and commutation modes and the drain-to-sourcehttp | //onsemi.comdiode has a very low reverse recovery time. MiniMOSt devices aredesigned for use in |