MMD70R900PRH Transistor — Specifications & Equivalents
MMD70R900PRH Transistor Datasheet, MMD70R900PRH Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 40 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 700 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 5 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 330 pF |
| Package | TO-252 |
| isc N-Channel MOSFET Transistor MMD70R900PRHFEATURESDrain Current | I = 5A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole |