Question 1

What is MMD60R900PRH?

Accepted Answer

MMD60R900PRH Transistor Datasheet, MMD60R900PRH Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of MMD60R900PRH?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 38 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V, |Id| ⓘ - Maximum Drain Current: 4.5 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Cossⓘ - Output Capacitance: 306 pF, Package: TO-252, isc N-Channel MOSFET Transistor MMD60R900PRHFEATURESDrain Current: I = 4.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so, isc N-Channel MOSFET Transistor MMD60R900QRHFEATURESDrain Current: I = 4.4A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive

Question 3

What are equivalent components to MMD60R900PRH?

Accepted Answer

Common equivalents include: SQD50N02-04L, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L, SQD50N04-4M1, SQD50N04-4M5L

MMD60R900PRH Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	38 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	600 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	30 V
\|Id\| ⓘ - Maximum Drain Current	4.5 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Cossⓘ - Output Capacitance	306 pF
Package	TO-252
isc N-Channel MOSFET Transistor MMD60R900PRHFEATURESDrain Current	I = 4.5A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max) @V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
isc N-Channel MOSFET Transistor MMD60R900QRHFEATURESDrain Current	I = 4.4A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive