MMBF170LT1G Transistor — Specifications & Equivalents

MMBF170LT1G Transistor Datasheet, MMBF170LT1G Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage20 V
|Id| ⓘ - Maximum Drain Current0.25 A
Tj ⓘ - Maximum Junction Temperature150 °C
PackageSOT23
MMBF170LT1Power MOSFET500 mA, 60 VN-Channel SOT-23Featureshttp//onsemi.com Pb-Free Packages are Available500 mA, 60 VMAXIMUM RATINGSRDS(on) = 5 WRating Symbol Value UnitDrain-Source Voltage VDSS 60 VdcDrain-Gate Voltage VDGS 60 VdcSOT-23CASE 318Gate-Source VoltageSTYLE 21- Continuous VGS 20 Vdc- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Curre

Equivalent & Replacement Parts

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