MMBF170LT1G Transistor — Specifications & Equivalents
MMBF170LT1G Transistor Datasheet, MMBF170LT1G Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 0.3 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 60 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 0.25 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Package | SOT23 |
| MMBF170LT1Power MOSFET500 mA, 60 VN-Channel SOT-23Featureshttp | //onsemi.com Pb-Free Packages are Available500 mA, 60 VMAXIMUM RATINGSRDS(on) = 5 WRating Symbol Value UnitDrain-Source Voltage VDSS 60 VdcDrain-Gate Voltage VDGS 60 VdcSOT-23CASE 318Gate-Source VoltageSTYLE 21- Continuous VGS 20 Vdc- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Curre |