Question 1

What is KDB15N50?

Accepted Answer

KDB15N50 Transistor Datasheet, KDB15N50 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of KDB15N50?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 300 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V, |Id| ⓘ - Maximum Drain Current: 15 A, Tj ⓘ - Maximum Junction Temperature: 175 °C, Cossⓘ - Output Capacitance: 230 pF, Package: TO-263, SMD Type MOSFETN-Channel SMPS Power MOSFETKDB15N50(FDB15N50)FeaturesTO-263Unit: mmLow Gate Charge Qg results in Simple Drive Requirement+0.24.57-0.2+0.1Improved Gate, Avalanche and High Reapplied dv/dt1.27-0.1RuggednessReduced rDS(ON)Reduced Miller Capacitance and Low Input Capacitance+0.10.1max1.27-0.1Improved Switching Speed with Low EMI+0.10.81-0.12.

Question 3

What are equivalent components to KDB15N50?

Accepted Answer

Common equivalents include: SQD50N02-04L, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L, SQD50N04-4M1, SQD50N04-4M5L

KDB15N50 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	300 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	500 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	30 V
\|Id\| ⓘ - Maximum Drain Current	15 A
Tj ⓘ - Maximum Junction Temperature	175 °C
Cossⓘ - Output Capacitance	230 pF
Package	TO-263
SMD Type MOSFETN-Channel SMPS Power MOSFETKDB15N50(FDB15N50)FeaturesTO-263Unit	mmLow Gate Charge Qg results in Simple Drive Requirement+0.24.57-0.2+0.1Improved Gate, Avalanche and High Reapplied dv/dt1.27-0.1RuggednessReduced rDS(ON)Reduced Miller Capacitance and Low Input Capacitance+0.10.1max1.27-0.1Improved Switching Speed with Low EMI+0.10.81-0.12.