K2611SB MOSFET — Specifications & Equivalents
About the K2611SB
The K2611SB is a MOSFET with a drain–source voltage (VDS) rating of 900 V and a continuous drain current (ID) of 9 A. It can dissipate up to 276 W and is rated to a junction temperature of 150 °C. It is supplied in the TO-3PB package.
At a glance
- Type: MOSFET
- Max drain–source voltage (VDS): 900 V
- Max continuous drain current (ID): 9 A
- Power dissipation (PD): 276 W
- Max junction temperature (TJ): 150 °C
- Package: TO-3PB
Typical applications
With its 900 V drain–source rating the K2611SB sits in the high-voltage (offline) class of switching MOSFETs, typically found in primary-side switching in offline SMPS (flyback, forward and quasi-resonant), active PFC boost stages, half-bridge and full-bridge inverters, induction heating and electronic ballasts and BLDC and AC motor drives. The rating leaves usable margin above the ~325 V DC bus obtained by rectifying 230 VAC mains, which is why this class dominates offline power supplies.
Gate drive and switching notes
Keep gate–source voltage within the ±30 V maximum; exceeding it punctures the gate oxide and destroys the device permanently.
Switching behaviour is characterised by an output capacitance (Coss) of 190 pF, which together with the gate drive determines switching loss and the practical upper frequency limit.
Choosing a replacement for the K2611SB
A drop-in substitute for the K2611SB should match its polarity and offer a drain–source rating of at least 900 V and a continuous drain current rating of at least 9 A.
Mechanically, check the replacement against the TO-3PB footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the K2611SB?
The K2611SB is a MOSFET (metal-oxide-semiconductor field-effect transistor). It is rated for 900 V drain-source and 9 A continuous drain current.
What is the maximum voltage of the K2611SB?
The K2611SB has a maximum drain-source voltage (Vds) of 900 V. Treat this as an absolute maximum and design with margin, especially when switching inductive loads.
How much current can the K2611SB handle?
It is rated for 9 A of continuous drain current, with power dissipation limited to 276 W. Real-world capability depends on your heatsinking and ambient temperature.
What package does the K2611SB come in?
It is listed in TO-3PB. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the K2611SB?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 276 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 900 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 9 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 190 pF |
| Package | TO-3PB |