JBL101N Transistor — Specifications & Equivalents
JBL101N Transistor Datasheet, JBL101N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 313 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 100 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 325 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 2099 pF |
| Package | POWER-JE-10X12 |