JBL101N Transistor — Specifications & Equivalents

JBL101N Transistor Datasheet, JBL101N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation313 W
|Vds|ⓘ - Maximum Drain-Source Voltage100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage20 V
|Id| ⓘ - Maximum Drain Current325 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance2099 pF
PackagePOWER-JE-10X12

Equivalent & Replacement Parts

Browse all electronic components