JBL083M Transistor — Specifications & Equivalents
JBL083M Transistor Datasheet, JBL083M Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 286 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 80 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 242 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 1224 pF |
| Package | POWER-JE-10X12 |