Question 1

What is IRLU110P?

Accepted Answer

IRLU110P Transistor Datasheet, IRLU110P Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of IRLU110P?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 61 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 15 A, Tj ⓘ - Maximum Junction Temperature: 175 °C, Cossⓘ - Output Capacitance: 110 pF, Package: TO251, IRLR/U110AFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.7 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.336 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ratings

Question 3

What are equivalent components to IRLU110P?

Accepted Answer

Common equivalents include: SQD50N02-04L, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L, SQD50N04-4M1, SQD50N04-4M5L

IRLU110P Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	61 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	100 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	15 A
Tj ⓘ - Maximum Junction Temperature	175 °C
Cossⓘ - Output Capacitance	110 pF
Package	TO251
IRLR/U110AFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4.7 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current	10A (Max.) @ VDS = 100V Lower RDS(ON): 0.336 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ratings