FJA4213 Transistor — Specifications & Equivalents
FJA4213 Transistor Datasheet pdf, FJA4213 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 130 W |
| Maximum Collector-Base Voltage |Vcb| | 250 V |
| Maximum Collector-Emitter Voltage |Vce| | 250 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 17 A |
| Forward Current Transfer Ratio (hFE), MIN | 55 |
| Noise Figure, dB | - |
| Package | TO3PN |
| January 20092SA1962/FJA4213PNP Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability | IC = -17ATO-3P High Power Dissipation : 130watts 1 High Frequency : 30MHz.1.Base 2.Collector 3.Emitter High Voltage : VCEO= -250V Wide S.O.A for reliable operation. Excel |
| October 2008FJA4210PNP Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability | IC= -10A High Power Dissipation Wide S.O.A Complement to FJA4310TO-3P11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsVCBO Collector-Base Voltage -200 VVCEO Collector-Emitter Voltage -1 |