FJA4213 bipolar transistor — Specifications & Equivalents
About the FJA4213
The FJA4213 is a PNP bipolar transistor with a collector–emitter voltage (VCEO) rating of 250 V, a continuous collector current (IC) of 17 A and a DC current gain (hFE) of minimum 55. It can dissipate up to 130 W. It is supplied in the TO3PN package.
At a glance
- Type: PNP bipolar transistor
- Max collector–emitter voltage (VCEO): 250 V
- Max collector current (IC): 17 A
- DC current gain (hFE): minimum 55
- Power dissipation (PD): 130 W
- Package: TO3PN
Typical applications
Judging from its ratings the FJA4213 is generally applied in power output and driver stages.
The quoted current gain of minimum 55 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.
Biasing and absolute maximum ratings
Absolute-maximum breakdown limits are VCEO 250 V, VCBO 250 V and VEBO 5 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.
Dissipation is capped at 130 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.
Choosing a replacement for the FJA4213
A drop-in substitute for the FJA4213 must be the same PNP type and offer a collector–emitter rating of at least 250 V, a collector current rating of at least 17 A and current gain in the same ballpark as minimum 55.
Mechanically, check the replacement against the TO3PN footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the FJA4213?
The FJA4213 is a PNP bipolar junction transistor (BJT). It is rated for 250 V collector-emitter and 17 A continuous collector current.
What is the maximum voltage of the FJA4213?
Maximum collector-emitter voltage (Vceo) is 250 V, and collector-base (Vcbo) is 250 V.
How much current can the FJA4213 handle?
Continuous collector current is rated at 17 A, with dissipation limited to 130 W.
What is the hFE of the FJA4213?
DC current gain (hFE) is quoted as minimum 55. Size base drive from the minimum value so the transistor saturates fully across production spread.
What package does the FJA4213 come in?
It is listed in TO3PN. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the FJA4213?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 130 W |
| Maximum Collector-Base Voltage |Vcb| | 250 V |
| Maximum Collector-Emitter Voltage |Vce| | 250 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 17 A |
| Forward Current Transfer Ratio (hFE), MIN | 55 |
| Noise Figure, dB | - |
| Package | TO3PN |
| January 20092SA1962/FJA4213PNP Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability | IC = -17ATO-3P High Power Dissipation : 130watts 1 High Frequency : 30MHz.1.Base 2.Collector 3.Emitter High Voltage : VCEO= -250V Wide S.O.A for reliable operation. Excel |
| October 2008FJA4210PNP Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability | IC= -10A High Power Dissipation Wide S.O.A Complement to FJA4310TO-3P11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsVCBO Collector-Base Voltage -200 VVCEO Collector-Emitter Voltage -1 |