FJA4210 Transistor — Specifications & Equivalents
FJA4210 Transistor Datasheet pdf, FJA4210 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 100 W |
| Maximum Collector-Base Voltage |Vcb| | 200 V |
| Maximum Collector-Emitter Voltage |Vce| | 140 V |
| Maximum Emitter-Base Voltage |Veb| | 6 V |
| Maximum Collector Current |Ic max| | 10 A |
| Forward Current Transfer Ratio (hFE), MIN | 50 |
| Noise Figure, dB | - |
| Package | TO3PN |
| October 2008FJA4210PNP Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability | IC= -10A High Power Dissipation Wide S.O.A Complement to FJA4310TO-3P11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsVCBO Collector-Base Voltage -200 VVCEO Collector-Emitter Voltage -1 |
| January 20092SA1962/FJA4213PNP Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability | IC = -17ATO-3P High Power Dissipation : 130watts 1 High Frequency : 30MHz.1.Base 2.Collector 3.Emitter High Voltage : VCEO= -250V Wide S.O.A for reliable operation. Excel |
Equivalent & Replacement Parts
- ZXTP25100BFH
- ZXTP25100CFH
- ZXTP25100CZ
- ZXTP722MA
- 2SA1943
- 2SC5200
- BDW94CF
- FJA13009
- D965
- FJA4213
- FJA4310
- FJA4313
- FJB102
- FJB3307D
- FJD3076
- FJD3305H1
- FJD5304D