BDW94CF bipolar transistor — Specifications & Equivalents
About the BDW94CF
The BDW94CF is a PNP bipolar transistor with a collector–emitter voltage (VCEO) rating of 100 V, a continuous collector current (IC) of 12 A and a DC current gain (hFE) of minimum 750. It can dissipate up to 30 W. It is supplied in the TO220F package.
At a glance
- Type: PNP bipolar transistor
- Max collector–emitter voltage (VCEO): 100 V
- Max collector current (IC): 12 A
- DC current gain (hFE): minimum 750
- Power dissipation (PD): 30 W
- Package: TO220F
Typical applications
Judging from its ratings the BDW94CF is generally applied in power output and driver stages.
The quoted current gain of minimum 750 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.
Biasing and absolute maximum ratings
Absolute-maximum breakdown limits are VCEO 100 V and VCBO 100 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.
Dissipation is capped at 30 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.
Choosing a replacement for the BDW94CF
A drop-in substitute for the BDW94CF must be the same PNP type and offer a collector–emitter rating of at least 100 V, a collector current rating of at least 12 A and current gain in the same ballpark as minimum 750.
Mechanically, check the replacement against the TO220F footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the BDW94CF?
The BDW94CF is a PNP bipolar junction transistor (BJT). It is rated for 100 V collector-emitter and 12 A continuous collector current.
What is the maximum voltage of the BDW94CF?
Maximum collector-emitter voltage (Vceo) is 100 V, and collector-base (Vcbo) is 100 V.
How much current can the BDW94CF handle?
Continuous collector current is rated at 12 A, with dissipation limited to 30 W.
What is the hFE of the BDW94CF?
DC current gain (hFE) is quoted as minimum 750. Size base drive from the minimum value so the transistor saturates fully across production spread.
What package does the BDW94CF come in?
It is listed in TO220F. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the BDW94CF?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 30 W |
| Maximum Collector-Base Voltage |Vcb| | 100 V |
| Maximum Collector-Emitter Voltage |Vce| | 100 V |
| Maximum Collector Current |Ic max| | 12 A |
| Forward Current Transfer Ratio (hFE), MIN | 750 |
| Noise Figure, dB | - |
| Package | TO220F |
| January 2005BDW94/CPNP Epitaxial Silicon TransistorPower Linear and Switching Application Power Darlington TR Complement to BDW93 and BDW93C RespectivelyTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage | BDW94 -45 V: BDW94C -100 VVCEO Collector-Emitter Voltage: |