Question 1

What is BDW94CF?

Accepted Answer

BDW94CF Transistor Datasheet pdf, BDW94CF Equivalent. Parameters and Characteristics

Question 2

What are the specifications of BDW94CF?

Accepted Answer

Key specifications include: Material of Transistor: Si, Polarity: PNP, Maximum Collector Power Dissipation (Pc): 30 W, Maximum Collector-Base Voltage |Vcb|: 100 V, Maximum Collector-Emitter Voltage |Vce|: 100 V, Maximum Collector Current |Ic max|: 12 A, Forward Current Transfer Ratio (hFE), MIN: 750, Noise Figure, dB: -, Package: TO220F, January 2005BDW94/CPNP Epitaxial Silicon TransistorPower Linear and Switching Application Power Darlington TR Complement to BDW93 and BDW93C RespectivelyTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage: BDW94 -45 V: BDW94C -100 VVCEO Collector-Emitter Voltage:

Question 3

What are equivalent components to BDW94CF?

Accepted Answer

Common equivalents include: ZXTP2039F, ZXTP25060BFH, ZXTP25100BFH, ZXTP25100CFH, ZXTP25100CZ, ZXTP722MA, 2SA1943, 2SC5200

BDW94CF Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Material of Transistor	Si
Polarity	PNP
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Collector Current \|Ic max\|	12 A
Forward Current Transfer Ratio (hFE), MIN	750
Noise Figure, dB	-
Package	TO220F
January 2005BDW94/CPNP Epitaxial Silicon TransistorPower Linear and Switching Application Power Darlington TR Complement to BDW93 and BDW93C RespectivelyTO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage	BDW94 -45 V: BDW94C -100 VVCEO Collector-Emitter Voltage: