FJB102 Transistor — Specifications & Equivalents
FJB102 Transistor Datasheet pdf, FJB102 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 80 W |
| Maximum Collector-Base Voltage |Vcb| | 100 V |
| Maximum Collector-Emitter Voltage |Vce| | 100 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 8 A |
| Forward Current Transfer Ratio (hFE), MIN | 1000 |
| Noise Figure, dB | - |
| Package | TO263 |
| FJB102High Voltage Power Darlington TransistorFeatures High DC Current Gain | hFE=1000 @ VCE=4V, IC=3A (Min.) Low Collector-Emitter Saturation Voltage High Collector-Emitter Sustaining Voltage Monolithic Construction with Built-in Base-Emitter Shunt Resistors Industrial UseEquivalent CircuitCBD2-PAK1R1 R21.Base 2.Collector 3.EmitterER1 10k |
Equivalent & Replacement Parts
- 2SB858B
- 2SB858C
- 2SB858D
- 2SB859
- 2SB859B
- 2SB859C
- 2SB86
- 2SB860
- 2SC2625
- 2SB861B
- 2SB861C
- 2SB862
- 2SB863
- 2SB863O
- 2SB863R
- 2SB864
- 2SB865