FJA4310 bipolar transistor — Specifications & Equivalents
About the FJA4310
The FJA4310 is an NPN bipolar transistor with a collector–emitter voltage (VCEO) rating of 140 V, a continuous collector current (IC) of 10 A and a DC current gain (hFE) of minimum 50. It can dissipate up to 100 W. It is supplied in the TO3PN package.
At a glance
- Type: NPN bipolar transistor
- Max collector–emitter voltage (VCEO): 140 V
- Max collector current (IC): 10 A
- DC current gain (hFE): minimum 50
- Power dissipation (PD): 100 W
- Package: TO3PN
Typical applications
Judging from its ratings the FJA4310 is generally applied in power output and driver stages.
The quoted current gain of minimum 50 determines the base drive needed: divide your target collector current by the minimum hFE, not the typical figure, when sizing the base resistor.
Biasing and absolute maximum ratings
Absolute-maximum breakdown limits are VCEO 140 V, VCBO 200 V and VEBO 6 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.
Dissipation is capped at 100 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.
Choosing a replacement for the FJA4310
A drop-in substitute for the FJA4310 must be the same NPN type and offer a collector–emitter rating of at least 140 V, a collector current rating of at least 10 A and current gain in the same ballpark as minimum 50.
Mechanically, check the replacement against the TO3PN footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.
Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.
Frequently asked questions
What is the FJA4310?
The FJA4310 is an NPN bipolar junction transistor (BJT). It is rated for 140 V collector-emitter and 10 A continuous collector current.
What is the maximum voltage of the FJA4310?
Maximum collector-emitter voltage (Vceo) is 140 V, and collector-base (Vcbo) is 200 V.
How much current can the FJA4310 handle?
Continuous collector current is rated at 10 A, with dissipation limited to 100 W.
What is the hFE of the FJA4310?
DC current gain (hFE) is quoted as minimum 50. Size base drive from the minimum value so the transistor saturates fully across production spread.
What package does the FJA4310 come in?
It is listed in TO3PN. Verify the pinout of the specific variant, as one outline can carry different pin assignments.
What can I use to replace the FJA4310?
This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 100 W |
| Maximum Collector-Base Voltage |Vcb| | 200 V |
| Maximum Collector-Emitter Voltage |Vce| | 140 V |
| Maximum Emitter-Base Voltage |Veb| | 6 V |
| Maximum Collector Current |Ic max| | 10 A |
| Forward Current Transfer Ratio (hFE), MIN | 50 |
| Noise Figure, dB | - |
| Package | TO3PN |
| October 2008FJA4310NPN Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability | IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210TO-3P11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsVCBO Collector-Base Voltage 200 VVCEO Collector-Emitter Voltage 140 V |
| FJA4313Audio Power Amplifier High Current Capability | IC=15A High Power Dissipation Wide S.O.A Complement to FJA4213TO-3P11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base |
| January 20092SC5242/FJA4313NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability | IC = 17ATO-3P1 High Power Dissipation : 130watts1.Base 2.Collector 3.Emitter High Frequency : 30MHz. High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excelle |
Equivalent & Replacement Parts
- 2SB858B
- 2SB858C
- 2SB858D
- 2SB859
- 2SB859B
- 2SB859C
- 2SB86
- 2SB860
- 2SC2625
- 2SB861B
- 2SB861C
- 2SB862
- 2SB863
- 2SB863O
- 2SB863R
- 2SB864
- 2SB865