Question 1

What is FJA4310?

Accepted Answer

FJA4310 Transistor Datasheet pdf, FJA4310 Equivalent. Parameters and Characteristics

Question 2

What are the specifications of FJA4310?

Accepted Answer

Key specifications include: Material of Transistor: Si, Polarity: NPN, Maximum Collector Power Dissipation (Pc): 100 W, Maximum Collector-Base Voltage |Vcb|: 200 V, Maximum Collector-Emitter Voltage |Vce|: 140 V, Maximum Emitter-Base Voltage |Veb|: 6 V, Maximum Collector Current |Ic max|: 10 A, Forward Current Transfer Ratio (hFE), MIN: 50, Noise Figure, dB: -, Package: TO3PN, October 2008FJA4310NPN Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability: IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210TO-3P11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsVCBO Collector-Base Voltage 200 VVCEO Collector-Emitter Voltage 140 V, FJA4313Audio Power Amplifier High Current Capability: IC=15A High Power Dissipation Wide S.O.A Complement to FJA4213TO-3P11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base, January 20092SC5242/FJA4313NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17ATO-3P1 High Power Dissipation : 130watts1.Base 2.Collector 3.Emitter High Frequency : 30MHz. High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excelle

Question 3

What are equivalent components to FJA4310?

Accepted Answer

Common equivalents include: 2SB858B, 2SB858C, 2SB858D, 2SB859, 2SB859B, 2SB859C, 2SB86, 2SB860

FJA4310 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Material of Transistor	Si
Polarity	NPN
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	140 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	10 A
Forward Current Transfer Ratio (hFE), MIN	50
Noise Figure, dB	-
Package	TO3PN
October 2008FJA4310NPN Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability	IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210TO-3P11.Base 2.Collector 3.EmitterAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsVCBO Collector-Base Voltage 200 VVCEO Collector-Emitter Voltage 140 V
FJA4313Audio Power Amplifier High Current Capability	IC=15A High Power Dissipation Wide S.O.A Complement to FJA4213TO-3P11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base
January 20092SC5242/FJA4313NPN Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability	IC = 17ATO-3P1 High Power Dissipation : 130watts1.Base 2.Collector 3.Emitter High Frequency : 30MHz. High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excelle