CS1N60A3H Transistor — Specifications & Equivalents
CS1N60A3H Transistor Datasheet, CS1N60A3H Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 25 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 600 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 30 V |
| |Id| ⓘ - Maximum Drain Current | 0.8 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 10.7 pF |
| Package | TO-251 |