2SD72 Transistor — Specifications & Equivalents
2SD72 Transistor Datasheet pdf, 2SD72 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Ge |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 0.21 W |
| Maximum Collector-Base Voltage |Vcb| | 25 V |
| Maximum Collector-Emitter Voltage |Vce| | 25 V |
| Maximum Emitter-Base Voltage |Veb| | 12 V |
| Maximum Collector Current |Ic max| | 0.6 A |
| Max. Operating Junction Temperature (Tj) | 125 °C |
| Transition Frequency (ft) | 0.3 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 60 |
| Noise Figure, dB | - |
| Package | TO1 |
| isc Silicon NPN Power Transistor 2SD728DESCRIPTIONCollector-Emitter Breakdown Voltage- | V = 100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB692Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applications.ABSOLUTE |