Question 1

What is 2SD723?

Accepted Answer

2SD723 Transistor Datasheet pdf, 2SD723 Equivalent. Parameters and Characteristics

Question 2

What are the specifications of 2SD723?

Accepted Answer

Key specifications include: Material of Transistor: Si, Polarity: NPN, Maximum Collector Power Dissipation (Pc): 40 W, Maximum Collector-Base Voltage |Vcb|: 100 V, Maximum Collector-Emitter Voltage |Vce|: 100 V, Maximum Emitter-Base Voltage |Veb|: 4 V, Maximum Collector Current |Ic max|: 4 A, Max. Operating Junction Temperature (Tj): 135 °C, Forward Current Transfer Ratio (hFE), MIN: 50, Noise Figure, dB: -, Package: TO220, isc Product Specificationisc Silicon NPN Power Transistor 2SD723DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR) CEODC Current Gain -h = 50(Min)@ I = 0.5AFE CFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and

Question 3

What are equivalent components to 2SD723?

Accepted Answer

Common equivalents include: 2SD717Y, 2SD718, 2SD718O, 2SD718R, 2SD72, 2SD720, 2SD721, 2SD722

2SD723 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Material of Transistor	Si
Polarity	NPN
Maximum Collector Power Dissipation (Pc)	40 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	135 °C
Forward Current Transfer Ratio (hFE), MIN	50
Noise Figure, dB	-
Package	TO220
isc Product Specificationisc Silicon NPN Power Transistor 2SD723DESCRIPTIONCollector-Emitter Breakdown Voltage-	V = 100V(Min)(BR) CEODC Current Gain -h = 50(Min)@ I = 0.5AFE CFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose amplifier and