2SD716R Transistor — Specifications & Equivalents
2SD716R Transistor Datasheet pdf, 2SD716R Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 60 W |
| Maximum Collector-Base Voltage |Vcb| | 100 V |
| Maximum Collector-Emitter Voltage |Vce| | 100 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 6 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 6 MHz |
| Collector Capacitance (Cc) | 100 pF |
| Forward Current Transfer Ratio (hFE), MIN | 55 |
| Noise Figure, dB | - |
| Package | TO247 |
| isc Silicon NPN Power Transistor 2SD716DESCRIPTIONCollector-Emitter Breakdown Voltage- | V = 100V (Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V (Max)@I = 4ACE(sat) CComplement to Type 2SB686Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommended for 30~35W high-fid |
| UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1TO-3P 1 | BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage VCBO 120 VCollector-Emitter Voltage VCEO 120 VEmitter-Base Voltage |