2SD718R Transistor — Specifications & Equivalents
2SD718R Transistor Datasheet pdf, 2SD718R Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 80 W |
| Maximum Collector-Base Voltage |Vcb| | 120 V |
| Maximum Collector-Emitter Voltage |Vce| | 120 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 8 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 6 MHz |
| Collector Capacitance (Cc) | 170 pF |
| Forward Current Transfer Ratio (hFE), MIN | 55 |
| Noise Figure, dB | - |
| Package | TO3P |
| SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD718DESCRIPTIONCollector-Emitter Breakdown Voltage- | V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB688APPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-50W audio frequency amplifieroutput stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR |
| UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1TO-3P 1 | BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25) PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage VCBO 120 VCollector-Emitter Voltage VCEO 120 VEmitter-Base Voltage |