Question 1

What is 2SD724?

Accepted Answer

2SD724 Transistor Datasheet pdf, 2SD724 Equivalent. Parameters and Characteristics

Question 2

What are the specifications of 2SD724?

Accepted Answer

Key specifications include: Material of Transistor: Si, Polarity: NPN, Maximum Collector Power Dissipation (Pc): 30 W, Maximum Collector-Base Voltage |Vcb|: 200 V, Maximum Collector-Emitter Voltage |Vce|: 80 V, Maximum Collector Current |Ic max|: 4 A, Max. Operating Junction Temperature (Tj): 150 °C, Forward Current Transfer Ratio (hFE), MIN: 80, Noise Figure, dB: -, Package: TO220, isc Silicon NPN Power Transistor 2SD728DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB692Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applications.ABSOLUTE

Question 3

What are equivalent components to 2SD724?

Accepted Answer

Common equivalents include: 2SD718, 2SD718O, 2SD718R, 2SD72, 2SD720, 2SD721, 2SD722, 2SD723

2SD724 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Material of Transistor	Si
Polarity	NPN
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	80
Noise Figure, dB	-
Package	TO220
isc Silicon NPN Power Transistor 2SD728DESCRIPTIONCollector-Emitter Breakdown Voltage-	V = 100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB692Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applications.ABSOLUTE