Question 1

What is 2SD722?

Accepted Answer

2SD722 Transistor Datasheet pdf, 2SD722 Equivalent. Parameters and Characteristics

Question 2

What are the specifications of 2SD722?

Accepted Answer

Key specifications include: Material of Transistor: Si, Polarity: NPN, Maximum Collector Power Dissipation (Pc): 100 W, Maximum Collector-Base Voltage |Vcb|: 120 V, Maximum Collector-Emitter Voltage |Vce|: 100 V, Maximum Emitter-Base Voltage |Veb|: 1 V, Maximum Collector Current |Ic max|: 10 A, Max. Operating Junction Temperature (Tj): 135 °C, Forward Current Transfer Ratio (hFE), MIN: 500, Noise Figure, dB: -, Package: TO220, isc Silicon NPN Power Transistor 2SD728DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB692Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applications.ABSOLUTE

Question 3

What are equivalent components to 2SD722?

Accepted Answer

Common equivalents include: 2SD717O, 2SD717Y, 2SD718, 2SD718O, 2SD718R, 2SD72, 2SD720, 2SD721

2SD722 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Material of Transistor	Si
Polarity	NPN
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	1 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	135 °C
Forward Current Transfer Ratio (hFE), MIN	500
Noise Figure, dB	-
Package	TO220
isc Silicon NPN Power Transistor 2SD728DESCRIPTIONCollector-Emitter Breakdown Voltage-	V = 100V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB692Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier and powerswitching applications.ABSOLUTE