2SC3357-E Transistor — Specifications & Equivalents
2SC3357-E Transistor Datasheet pdf, 2SC3357-E Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 1.2 W |
| Maximum Collector-Base Voltage |Vcb| | 20 V |
| Maximum Collector-Emitter Voltage |Vce| | 12 V |
| Maximum Emitter-Base Voltage |Veb| | 3 V |
| Maximum Collector Current |Ic max| | 0.1 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 6500(typ) MHz |
| Forward Current Transfer Ratio (hFE), MIN | 125 |
| Noise Figure, dB | - |
| Package | SOT89 |
| NEC's NPN SILICON HIGH NE856FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT | fT = 7 GHz LOW NOISE FIGURE:1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION35 (MICRO-X)00 (CHIP) LOW COSTDESCRIPTIONNEC's NE856 series of NPN epitaxial silicon transistors isdesigned for low cost amplifier and oscillator application |
| DATA SHEETSILICON TRANSISTOR2SC3357NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC3357 is an NPN silicon epitaxial transistor designed for(Unit | mm)low noise amplifier at VHF, UHF and CATV band.It has large dynamic range and good current characteristic.4.50.11.50.11.60.2FEATURES Low Noise and High GainNF = 1.1 dB TYP., |