2SC3357-E bipolar transistor — Specifications & Equivalents

About the 2SC3357-E

The 2SC3357-E is an NPN bipolar transistor with a collector–emitter voltage (V_CEO) rating of 12 V, a continuous collector current (I_C) of 0.1 A and a DC current gain (h_FE) of minimum 125. It can dissipate up to 1.2 W and is rated to a junction temperature of 150 °C. It is supplied in the SOT89 package.

At a glance

• Type: NPN bipolar transistor
• Max collector–emitter voltage (V_CEO): 12 V
• Max collector current (I_C): 0.1 A
• DC current gain (h_FE): minimum 125
• Transition frequency (f_T): 6500(typ) MHz
• Power dissipation (P_D): 1.2 W
• Max junction temperature (T_J): 150 °C
• Package: SOT89
• Manufacturer: Multi-source (JIS registered part number)

Typical applications

Judging from its ratings the 2SC3357-E is generally applied in RF and high-speed switching stages and small-signal amplification and general-purpose switching.

A transition frequency (f_T) of 6500(typ) MHz indicates the frequency range over which useful current gain remains available.

The quoted current gain of minimum 125 determines the base drive needed: divide your target collector current by the minimum h_FE, not the typical figure, when sizing the base resistor.

Biasing and absolute maximum ratings

Absolute-maximum breakdown limits are V_CEO 12 V, V_CBO 20 V and V_EBO 3 V (magnitudes). The emitter–base rating is the easiest to overlook and is often only a few volts, so protect the junction against reverse drive.

Dissipation is capped at 1.2 W, and that figure assumes the datasheet's mounting and ambient conditions — derate it for your own thermal design.

Choosing a replacement for the 2SC3357-E

A drop-in substitute for the 2SC3357-E must be the same NPN type and offer a collector–emitter rating of at least 12 V, a collector current rating of at least 0.1 A, current gain in the same ballpark as minimum 125 and a transition frequency of at least 6500(typ) MHz for the same bandwidth.

Mechanically, check the replacement against the SOT89 footprint and confirm the pin order — parts sharing a package outline do not always share a pinout.

Because 2SC3357-E is a JIS-registered part number rather than one vendor's proprietary series, it is produced by several manufacturers. Datasheet figures vary slightly between them, so check the datasheet of the brand you actually buy — this also makes like-for-like sourcing easier.

Where the application switches inductive loads or runs near the voltage limit, keep extra headroom rather than choosing a part that only just meets the original numbers.

Frequently asked questions

What is the 2SC3357-E?

The 2SC3357-E is an NPN bipolar junction transistor (BJT). It is rated for 12 V collector-emitter and 0.1 A continuous collector current.

What is the maximum voltage of the 2SC3357-E?

Maximum collector-emitter voltage (Vceo) is 12 V, and collector-base (Vcbo) is 20 V.

How much current can the 2SC3357-E handle?

Continuous collector current is rated at 0.1 A, with dissipation limited to 1.2 W.

What is the hFE of the 2SC3357-E?

DC current gain (hFE) is quoted as minimum 125. Size base drive from the minimum value so the transistor saturates fully across production spread.

What package does the 2SC3357-E come in?

It is listed in SOT89. Verify the pinout of the specific variant, as one outline can carry different pin assignments.

What can I use to replace the 2SC3357-E?

This page lists 17 candidate equivalents matched on electrical ratings and package. Any replacement should meet or exceed the original voltage, current and dissipation figures and use a compatible drive level.