2SC3356-R24 Transistor — Specifications & Equivalents
2SC3356-R24 Transistor Datasheet pdf, 2SC3356-R24 Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 0.2 W |
| Maximum Collector-Base Voltage |Vcb| | 20 V |
| Maximum Collector-Emitter Voltage |Vce| | 12 V |
| Maximum Emitter-Base Voltage |Veb| | 3 V |
| Maximum Collector Current |Ic max| | 0.1 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 7000(typ) MHz |
| Forward Current Transfer Ratio (hFE), MIN | 80 |
| Noise Figure, dB | - |
| Package | SOT23 |
| NEC's NPN SILICON HIGH NE856FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT | fT = 7 GHz LOW NOISE FIGURE:1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION35 (MICRO-X)00 (CHIP) LOW COSTDESCRIPTIONNEC's NE856 series of NPN epitaxial silicon transistors isdesigned for low cost amplifier and oscillator application |