2SD882-Q Transistor — Specifications & Equivalents
2SD882-Q Transistor Datasheet pdf, 2SD882-Q Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | NPN |
| Maximum Collector Power Dissipation (Pc) | 0.5 W |
| Maximum Collector-Base Voltage |Vcb| | 40 V |
| Maximum Collector-Emitter Voltage |Vce| | 30 V |
| Maximum Emitter-Base Voltage |Veb| | 6 V |
| Maximum Collector Current |Ic max| | 3 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 50 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 100 |
| Noise Figure, dB | - |
| Package | SOT89 |
| TransistorsSMD Type TransistorsNPN Silicon Power Transistor2SD882TO-252 Features Unit | mm6.50+0.15 2.30+0.1-0.15 -0.1 Collector Power Dissipation: PC=1.25W+0.85.30+0.2 0.50-0.7-0.2 Collector Current: IC=3A0.1270.80+0.1 max-0.121 32.3 0.60+0.1-0.11 Base+0.154.60-0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating |