2SA1015-L Transistor — Specifications & Equivalents
2SA1015-L Transistor Datasheet pdf, 2SA1015-L Equivalent. Parameters and Characteristics
Key Specifications
| Material of Transistor | Si |
|---|---|
| Polarity | PNP |
| Maximum Collector Power Dissipation (Pc) | 0.2 W |
| Maximum Collector-Base Voltage |Vcb| | 50 V |
| Maximum Collector-Emitter Voltage |Vce| | 50 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Maximum Collector Current |Ic max| | 0.15 A |
| Max. Operating Junction Temperature (Tj) | 150 °C |
| Transition Frequency (ft) | 80 MHz |
| Forward Current Transfer Ratio (hFE), MIN | 130 |
| Noise Figure, dB | - |
| Package | SOT23 |
| 2SC1015PNP Transistors321.BaseFeatures 2.Emitter1 3.CollectorHigh voltage and high currentVCEO | =-50V(min.),IC=-150mA(max.) Simplified outline(SOT-23)Low niose: NF=1dB(Typ.) at f=1KHzAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage VEBO -5 VCollector Current -Con |
Equivalent & Replacement Parts
- HS8550
- HS8550A
- HSA1037AKQ
- HSA1037AKR
- HSA1037AKS
- HSS8050
- HSS8550
- 2SA1015-H
- MPSA42
- 2SB772-E
- 2SB772-P
- 2SB772-Q
- 2SC3356-R23
- 2SC3356-R24
- 2SC3356-R26
- 2SC3357-E
- 2SC3357-F