Question 1

What is 2SB772-E?

Accepted Answer

2SB772-E Transistor Datasheet pdf, 2SB772-E Equivalent. Parameters and Characteristics

Question 2

What are the specifications of 2SB772-E?

Accepted Answer

Key specifications include: Material of Transistor: Si, Polarity: PNP, Maximum Collector Power Dissipation (Pc): 0.5 W, Maximum Collector-Base Voltage |Vcb|: 40 V, Maximum Collector-Emitter Voltage |Vce|: 30 V, Maximum Emitter-Base Voltage |Veb|: 6 V, Maximum Collector Current |Ic max|: 3 A, Max. Operating Junction Temperature (Tj): 150 °C, Transition Frequency (ft): 50 MHz, Forward Current Transfer Ratio (hFE), MIN: 200, Noise Figure, dB: -, Package: SOT89

Question 3

What are equivalent components to 2SB772-E?

Accepted Answer

Common equivalents include: HS8550A, HSA1037AKQ, HSA1037AKR, HSA1037AKS, HSS8050, HSS8550, 2SA1015-H, 2SA1015-L

2SB772-E Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Material of Transistor	Si
Polarity	PNP
Maximum Collector Power Dissipation (Pc)	0.5 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft)	50 MHz
Forward Current Transfer Ratio (hFE), MIN	200
Noise Figure, dB	-
Package	SOT89