2P829V Transistor — Specifications & Equivalents
2P829V Transistor Datasheet, 2P829V Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 200 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 600 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 25 V |
| |Id| ⓘ - Maximum Drain Current | 20 A |
| Tj ⓘ - Maximum Junction Temperature | 125 °C |
| Cossⓘ - Output Capacitance | 1100 pF |
| Package | КТ-105-1 |