Question 1

What is 2P829E?

Accepted Answer

2P829E Transistor Datasheet, 2P829E Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2P829E?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 125 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V, |Id| ⓘ - Maximum Drain Current: 60 A, Tj ⓘ - Maximum Junction Temperature: 125 °C, Cossⓘ - Output Capacitance: 3200 pF, Package: КТ-43А

Question 3

What are equivalent components to 2P829E?

Accepted Answer

Common equivalents include: SQD50N02-04L, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L, SQD50N04-4M1, SQD50N04-4M5L

2P829E Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	125 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	60 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	25 V
\|Id\| ⓘ - Maximum Drain Current	60 A
Tj ⓘ - Maximum Junction Temperature	125 °C
Cossⓘ - Output Capacitance	3200 pF
Package	КТ-43А