2N7002X Transistor — Specifications & Equivalents
2N7002X Transistor Datasheet, 2N7002X Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 0.5 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 60 V |
| |Id| ⓘ - Maximum Drain Current | 0.115 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 25 pF |
| Package | SOT-89 |
| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encap sulate MOSFETS SOT-89-3L 2N7002X MOSFET( N-Channel ) 1 1 2 FEA TURES 2 33 High density cell design for low RDS(on) 1.GATE Voltage controlled small signal switch 2. DRAIN Rugged and reliable 3. SOURCE High saturation current capability MARKING | K72 MAXIMUM RATINGS (Ta=25 |