2N7002X Transistor — Specifications & Equivalents

2N7002X Transistor Datasheet, 2N7002X Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage60 V
|Id| ⓘ - Maximum Drain Current0.115 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance25 pF
PackageSOT-89
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encap sulate MOSFETS SOT-89-3L 2N7002X MOSFET( N-Channel ) 1 1 2 FEA TURES 2 33 High density cell design for low RDS(on) 1.GATE Voltage controlled small signal switch 2. DRAIN Rugged and reliable 3. SOURCE High saturation current capability MARKINGK72 MAXIMUM RATINGS (Ta=25

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