2N7002WSK Transistor — Specifications & Equivalents
2N7002WSK Transistor Datasheet, 2N7002WSK Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 0.3 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 30 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 10 V |
| |Id| ⓘ - Maximum Drain Current | 0.154 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 10 pF |
| Package | SOT-523 |
| 2N7002WSK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES LOW ON-RESISTANCE FAST SWITCHING SPEED LOW VOLTAGE DRIVE ESD PROTECTED GATE PORTABLE APPLICATIONS SUCH AS CELL PHONES, MEDIA PLAYERS, DIGITAL CAMERAS, PDAS , VIDEO GAMES, HAND HELD COMPUTERS, ETC. MECHANICAL DATA Pb-Free PACKAGE IS AVAILABLE. Pb Free | 2N7002WSK H |
| February 20102N7002WN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantDSGSOT-323Marking | 2NAbsolute Maximum Ratings * TA = 25C unless otherwise notedSymbol Par |