2N7002WSK Transistor — Specifications & Equivalents

2N7002WSK Transistor Datasheet, 2N7002WSK Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Key Specifications

Pd ⓘ - Maximum Power Dissipation0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage10 V
|Id| ⓘ - Maximum Drain Current0.154 A
Tj ⓘ - Maximum Junction Temperature150 °C
Cossⓘ - Output Capacitance10 pF
PackageSOT-523
2N7002WSK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES LOW ON-RESISTANCE FAST SWITCHING SPEED LOW VOLTAGE DRIVE ESD PROTECTED GATE PORTABLE APPLICATIONS SUCH AS CELL PHONES, MEDIA PLAYERS, DIGITAL CAMERAS, PDAS , VIDEO GAMES, HAND HELD COMPUTERS, ETC. MECHANICAL DATA Pb-Free PACKAGE IS AVAILABLE. Pb Free2N7002WSK H
February 20102N7002WN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantDSGSOT-323Marking2NAbsolute Maximum Ratings * TA = 25C unless otherwise notedSymbol Par

Equivalent & Replacement Parts

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