Question 1

What is 2N7002KT1G?

Accepted Answer

2N7002KT1G Transistor Datasheet, 2N7002KT1G Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2N7002KT1G?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 0.42 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 0.38 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Cossⓘ - Output Capacitance: 4.2 pF, Package: SOT-23, 2N7002KTN-Channel ENHANCEMENT MODE POWER MOSFET3P b Lead(Pb)-Free12FEATURES: SC-89* Gate-Source ESD Protected: 1500 V* Fast Switching SpeedDrain* Low On-Resistance* Low Voltage Driver3APPLICATIONS:* Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories* Battery Operated Systems* Power Supply Converter Circuits1 (Top View) 2* Load/Power Switching Ce

Question 3

What are equivalent components to 2N7002KT1G?

Accepted Answer

Common equivalents include: SQD50N02-04L, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L, SQD50N04-4M1, SQD50N04-4M5L

2N7002KT1G Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	0.42 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	60 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	0.38 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Cossⓘ - Output Capacitance	4.2 pF
Package	SOT-23
2N7002KTN-Channel ENHANCEMENT MODE POWER MOSFET3P b Lead(Pb)-Free12FEATURES	SC-89* Gate-Source ESD Protected: 1500 V* Fast Switching SpeedDrain* Low On-Resistance* Low Voltage Driver3APPLICATIONS:* Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories* Battery Operated Systems* Power Supply Converter Circuits1 (Top View) 2* Load/Power Switching Ce