Question 1

What is 2N7002KS6?

Accepted Answer

2N7002KS6 Transistor Datasheet, 2N7002KS6 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2N7002KS6?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 0.35 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V, |Id| ⓘ - Maximum Drain Current: 0.25 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Package: SOT363, 2N7002KS6Descriptions N-CHANNEL MOSFET in a SOT-363 Plastic Package. Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating: 2200V HBMApplications Intended for use in general purpose switching and phase control applications. Pi nni ng Equivalent Circuit PIN1 4 S PIN 2 5 G PIN 3 6 D 2018-10/33REV:D Absolute Maximum Ratings(Ta=25, May 20112N7002KWN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101DSSOT-323GMarking: 7KWAb

Question 3

What are equivalent components to 2N7002KS6?

Accepted Answer

Common equivalents include: SQD50N02-04L, SQD50N03-06P, SQD50N03-09, SQD50N03-4M0L, SQD50N04-09H, SQD50N04-3M5L, SQD50N04-4M1, SQD50N04-4M5L

2N7002KS6 Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	0.35 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	60 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	20 V
\|Id\| ⓘ - Maximum Drain Current	0.25 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Package	SOT363
2N7002KS6Descriptions N-CHANNEL MOSFET in a SOT-363 Plastic Package. Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating	2200V HBMApplications Intended for use in general purpose switching and phase control applications. Pi nni ng Equivalent Circuit PIN1 4 S PIN 2 5 G PIN 3 6 D 2018-10/33REV:D Absolute Maximum Ratings(Ta=25
May 20112N7002KWN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101DSSOT-323GMarking	7KWAb