2N7002KD Transistor — Specifications & Equivalents
2N7002KD Transistor Datasheet, 2N7002KD Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog
Key Specifications
| Pd ⓘ - Maximum Power Dissipation | 0.15 W |
|---|---|
| |Vds|ⓘ - Maximum Drain-Source Voltage | 60 V |
| |Vgs|ⓘ - Maximum Gate-Source Voltage | 20 V |
| |Id| ⓘ - Maximum Drain Current | 0.34 A |
| Tj ⓘ - Maximum Junction Temperature | 150 °C |
| Cossⓘ - Output Capacitance | 30(max) pF |
| Package | SOT363 |
| 2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-363FEATURES A Low on-resistance EL Fast switching Speed 6 5 4 Low-voltage drive Easily designed drive circuits B ESD protected | 2000V 1 2 3FC H6 5 4MECHANICAL DATA JD2 G1 S1 D |