Question 1

What is 2N7002DCSM?

Accepted Answer

2N7002DCSM Transistor Datasheet, 2N7002DCSM Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

Question 2

What are the specifications of 2N7002DCSM?

Accepted Answer

Key specifications include: Pd ⓘ - Maximum Power Dissipation: 0.2 W, |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V, |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V, |Id| ⓘ - Maximum Drain Current: 0.115 A, Tj ⓘ - Maximum Junction Temperature: 150 °C, Cossⓘ - Output Capacitance: 11 pF, Package: LCC2, October 20072N7002DWN-Channel Enhancement Mode Field Effect TransistorFeatures Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantSC70-6 (SOT363)11Marking: 2NAbsolute Maximum Ratings * Ta = 25C un

Question 3

What are equivalent components to 2N7002DCSM?

Accepted Answer

Common equivalents include: 2N7002-7, 2N7002-7-F, 2N7002BKMB, 2N7002C1A, 2N7002C1B, 2N7002C1C, 2N7002C1D, 2N7002CSM

2N7002DCSM Transistor — Specifications & Equivalents

Key Specifications

Equivalent & Replacement Parts

Pd ⓘ - Maximum Power Dissipation	0.2 W
\|Vds\|ⓘ - Maximum Drain-Source Voltage	60 V
\|Vgs\|ⓘ - Maximum Gate-Source Voltage	40 V
\|Id\| ⓘ - Maximum Drain Current	0.115 A
Tj ⓘ - Maximum Junction Temperature	150 °C
Cossⓘ - Output Capacitance	11 pF
Package	LCC2
October 20072N7002DWN-Channel Enhancement Mode Field Effect TransistorFeatures Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantSC70-6 (SOT363)11Marking	2NAbsolute Maximum Ratings * Ta = 25C un